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PDF 2SA1762 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1762 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–80
V
Collector to emitter voltage VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1 A
Collector current
IC
– 0.5
A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1 MHz
min typ max Unit
– 0.1 µA
–80 V
–80 V
–5 V
130 330
50 100
– 0.2 – 0.4
V
– 0.85 –1.2
V
85 MHz
11 20 pF
*hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 185 ~ 330
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1762.PDF ] | |
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