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PDF 2SC1674 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1674 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1674
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for TV PIF, FM tuner RF amplifier, mixer,
and oscillator applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
30
20
4
20
150
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
30
Collector-Emitter Breakdown Voltage
BVCEO
20
Emitter-Base Breakdown Volatge
BVEBO
4
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
VBE(on)
hFE
-
-
-
40
Transition Frequency
fT 400
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
0.1
0.72
-
600
-
Max
-
-
-
0.1
0.1
0.3
-
240
-
1.3
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=5mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1mA
IC=1mA, VCE=6V
IC=1mA, VCE=6V
IC=1mA, VCE=6V
VCB=6V, f=1MHz, IE=0
Classification of hFE
Rank
R
Range
40~80
O
70~140
Y
120~240
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