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PDF 2SA1739 Data sheet ( Hoja de datos )

Número de pieza 2SA1739
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SA1739 Hoja de datos, Descripción, Manual

Transistor
2SA1739
Silicon PNP epitaxial planer type
For high speed switching
s Features
q High-speed switch (pair with 2SC3938)
q Low collector to emitter saturation voltage VCE(sat).
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–15
–15
–4
–100
–50
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : AX
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
IEBO
hFE1*
hFE2
VCB = –8V, IE = 0
VEB = –3V, IC = 0
VCE = –1V, IC = –10mA
VCE = –1V, IC = –1mA
– 0.1 µA
– 0.1 µA
50 150
30
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1 – 0.2
V
Transition frequency
Collector output capacitance
fT
Cob
VCB = –10V, IE = 10mA, f = 200MHz 800 1500
VCB = –5V, IE = 0, f = 1MHz
1
MHz
pF
Turn-on time
ton (Note 1) Next page
12 ns
Turn-off time
Storage time
toff (Note 1) Next page
tstg (Note 1) Next page
20 ns
19 ns
*hFE1 Rank classification
Rank
Q
hFE1 50 ~ 120
R
90 ~ 150
1

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