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PDF VRF3933 Datasheet ( Hoja de datos )

Número de pieza VRF3933
Descripción RF POWER VERTICAL MOSFET
Fabricantes Microsemi 
Logotipo Microsemi Logotipo

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VRF3933 Hoja de datos, Descripción, Manual
RF POWER VERTICAL MOSFET
The VRF3933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
VRF3933
VRF3933(MP)
100V, 300W, 150MHz
D
SS
G
FEATURES
• Improved Ruggedness V(BR)DSS = 250V
• 300W with 22dB Typ. Gain @ 30MHz, 100V
• Excellent Stability & Low IMD
• Common Source Configuration
• Available in Matched Pairs
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD3933
• Thermally Enhanced Package
• RoHS Compliant
Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Continuous Drain Current @ TC = 25°C
VGS Gate-Source Voltage
PD Total Device dissipation @ TC = 25°C
TSTG Storage Temperature Range
TJ Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF3933
Unit
250 V
20 A
±40 V
648 W
-65 to 150
200
°C
Static Electrical Characteristics
Symbol
Parameter
V(BR)DSS
VDS(ON)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 10A, VGS = 10V)
IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs Forward Transconductance (VDS = 10V, ID = 10A)
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
250 260
2.7 4.0
V
2.0 mA
2.0 μA
8 12
mhos
2.9 3.6 4.4
V
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Min Typ Max Unit
0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Free Datasheet http://www.datasheet4u.com/

1 page

VRF3933 pdf
VRF3933(MP)
Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code Vth Range
Code 2
Vth Range
A 2.900 - 2.975 M
3.650 - 3.725
B 2.975 - 3.050 N
3.725 - 3.800
C 3.050 - 3.125 P
3.800 - 3.875
D 3.125 - 3.200 R
3.875 - 3.950
E 3.200 - 3.275 S
3.950 - 4.025
F 3.275 - 3.350 T
4.025 - 4.100
G 3.350 - 3.425 W
4.100 - 4.175
H 3.425 - 3.500 X
4.175 - 4.250
J 3.500 - 3.575 Y
4.250 - 4.325
K 3.575 - 3.650 Z
4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
M177 (0.63 dia. SOE) Mechanical Data
All dimensions are ±.005
AJ
.125d nom
B
PIN 1 - DRAIN
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - SOURCE
PIN 5 - SOURCE
F
4
2
OK
C
D
E
1
.135 r
5
3
DIM MIN TYP
A 0.225 0.230
B 0.265 0.270
C 0.860 0.865
D 1.130 1.135
E 0.545 0.550
F 0.003 0.005
G 0.098 0.103
H 0.150 0.160
I
J 1.080 1.100
K 0.625 0.630
MAX
0.235
0.275
0.870
1.140
0.555
0.007
0.108
0.170
0.280
1.120
0.635
HI
G Seating Plane
HAZARDOUS MATERIAL WARNING: The ceramic portion of the device below the lead plane is beryllium oxide. Beryllium oxide dust is highly toxic when
inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or
domestic waste. BeO substrate weight: 0.703g. Percentage of total module weight which is BeO: 9%.

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