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PDF MDD1653 Data sheet ( Hoja de datos )
| Número de pieza | MDD1653 | |
| Descripción | 30V N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDD1653
30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ
General Description
The MDD1653 uses advanced Magnachip’s
MOSFET Technology, which provides high
performance in on-state resistance, fast switching
performance and excellent quality. MDD1653 is
suitable device for PWM, Load Switching and
general purpose applications.
Features
VDS = 30V
ID = 50A @VGS = 10V
RDS(ON)
< 8.5mΩ @VGS = 10V
< 14.0mΩ @VGS = 4.5V
Absoloute Maximun Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
August. 2008. Version 2.0
TC=25oC
TC=100oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
1
Symbol
VDSS
VGSS
ID
IDM
PD
PDSM
EAS
TJ, Tstg
Rating
30
±20
50
50
150
50
25
3
2.1
100
-55~150
Unit
V
V
A
A
A
W
W
mJ
oC
Symbol
RθJA
RθJC
Rating
45
2.5
Unit
oC/W
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet4u.com/
1 page  
100
Single Pulse
80
RΘ JA=77℃/W
TA=25℃
60
40
20
0
1E-3
0.01
0.1 1 10
T1, Time [sec]
100 1000
Fig13. Single Pulse Maximum
Power Dissipation
100
Single Pulse
80
RΘ JA=96℃/W
TA=25℃
60
40
20
0
1E-3
0.01
0.1 1 10
T1, Time [sec]
100 1000
Fig14. Single Pulse Maximum Peak
Current
August. 2008. Version 2.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MDD1653.PDF ] | |
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