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PDF IRHLF87Y20 Data sheet ( Hoja de datos )

Número de pieza IRHLF87Y20
Descripción RADIATION HARDENED LOGIC LEVEL POWER MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD-97810
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHLF87Y20 100K Rads (Si)
IRHLF83Y20 300K Rads (Si)
RDS(on)
32m
32m
ID
12A*
12A*
IRHLF87Y20
20V, N-CHANNEL
R 8 ™ TECHNOLOGY
International Rectifier’s R8TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
TO-39
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
12*
10.2 A
48
15.6 W
0.13
W/°C
±12 V
43 mJ
12 A
1.6 mJ
2.85
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/13/13
Free Datasheet http://www.datasheet4u.com/

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IRHLF87Y20 pdf
Pre-Irradiation
80
70 ID = 12A
60
50
40 TJ = 150°C
30 TJ = 25°C
20
10
0
0 2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
IRHLF87Y20
60
50
TJ = 150°C
40
30 TJ = 25°C
20
10
0
0
VGS = 4.5V
10 20 30 40 50
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
40
ID = 250µ$
38
36
34
32
30
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7 Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.5
2.0
1.5
1.0
ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5

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