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PDF LE28DW8102T Data sheet ( Hoja de datos )
| Número de pieza | LE28DW8102T | |
| Descripción | 8 Megabit FlashBank Memory | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LE28DW8102T (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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8 Megabit FlashBank Memory
LE28DW8102T
FEATURES:
• Single 3.0-Volt Read and Write Operations
• Separate Memory Banks by Address Space
– Simultaneous Read and Write Capability
• SuperiorReliability
– Endurance: 10,000 Cycles
– Data Retention: 10 years
• Low Power Consumption
– Active Current, Read:
– Active Current, Read & Write:
– Standby Current:
– Auto Low Power Mode Current:
10 mA (typical)
30 mA (typical)
5µA (typical)
5µA (typical)
• Fast Write Operation
– Bank Erase + Program:
– Block Erase + Program:
– Sector Erase + Program:
4.5 sec (typical)
500 ms (typical)
30 ms (typical)
• Fixed Erase, Program, Write Times
– Does not change after cycling
• Read Access Time
– 80/90 ns
• LatchedAddressandData
• End of Write Detection
– Toggle Bit
– Data # Polling
• Flash Bank: Two Small Erase Element Sizes
– 1K Words per Sector or 32K Words per Block
– Erase either element before Word Program
• CMOS I/O Compatibility
• PackagesAvailable
– 48-PinTSOP
• Continuous Hardware and Software Data
Protection (SDP)
1
Product Description
The LE28DW8102T consists of two memory banks, 2 each
256K x 16 bits sector mode flash EEPROM manufactured with
SANYO's proprietary, high performance FlashTechnology.
The LE28DW8102T writes with a 3.0-volt-only power supply.
The LE28DW8102T is divided into two separate memory
banks, 2 each 512K x 16 Flash banks. Each Flash bank is
typically used for program code storage and contains 256
sectors, each of 1K words or 8 blocks, each of 32K words. The
Flash banks may also be used to store data.
Any bank may be used for executing code while writing data
to a different bank. Each memory bank is controlled by separate
Bank selection address (A18) lines.
The LE28DW8102T inherently uses less energy during Erase,
and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, current,
and time of application. Since for any given voltage range, the
Flash technology uses less current to program and has a
shorter Erase time, the total energy consumed during any Erase
or Program operation is less than alternative flash technolo-
gies. The Auto Low Power mode automatically reduces the
active read current to approximately the same as standby; thus,
providing an average read current of approximately 1 mA/MHz
of Read cycle time.
flash technologies, whose Erase and Program times increase
with accumulated erase/program cycles.
Device Operation
The LE28DW8102T operates as two independent 4Megabit
Word Pogram, Sector Erase flash EEPROMs.
All memory banks share common address lines, I/O lines,
WE#, and OE#. Memory bank selection is by bank select
address. WE# is used with SDP to control the Erase and
Program operation in each memory bank.
The LE28DW8102T provides the added functionality of
being able to simultaneously read from one memory bank
while erasing, or programming to one other memory bank.
Once the internally controlled Erase or Program cycle in a
memory bank has commenced, a different memory bank can
be accessed for read. Also, once WE# and CE# are high
during the SDP load sequence, a different bank may be
accessed to read. LE28DW8102T which selectes a bank by
a address. It can be used as a normal conventinal flash
memory when operats erase or program operation to only a
bank at non-concurrent operation.
The device ID cannot be accessed while any bank is writing,
erasing, or programming.
The Flash technology provides fixed Erase and Program times,
independent of the number of erase/program cycles that have
occurred. Therefore the system software or hardware does not
have to be modified or de-rated as is necessary with alternative
The Auto Low Power Mode automatically puts the
LE28DW8102T in a near standby mode after data has been
accessed with a valid Read operation. This reduces the IDD
active read current from typically 10mA to typically 5µA.
The Auto Low Power mode reduces the typical IDD active
SANYO Electric Co.,Ltd. Semiconductor Company 1-11-1 Sakata Oizumi Gunma Japan
The Flash Bank product family was jointly developed by SANYO and Sillicon Storage Technology,Inc.(SST),under SST's technology license. This preliminary specification is subject to change without notice.
R.1.01(2/15/2000) No.xxxx-1/19
Free Datasheet http://www.datasheet4u.com/
1 page  
8 Megabit FlashBank Memory
LE28DW8102T
5
Symbol
A18
A17-A0
A17-A15
A17-A10
Pin Name
Bank Select address
Flash Bank addresses
Flash Bank Block addresses
Flash Bank Sector addresses
DQ15-DQ0 Data Input/Output
CE#
OE#
WE#
VDD
Chip Enable
Output Enable
Write Enable
Power Supply
GND
Ground
NC No Connection
Table1: Pin Description
Function
To activate the Bank1 when low, to activate the Bank2 when high
To provide Flash Bank address
To select a Flash Bank Block for erase
To select a Flash Bank Sector for erase
To output data during read cycle and receive input data during write
cycle. The outputs are in tristate when OE# is high or CE# is high.
To activate the Flash Bank when CE# is low.
To gate the data output buffers.
To control the write, erase or program operations.
To provide 3.0 volts supply.(2.7 to 3.3 volts)
Unconnected Pins
Charge Pump
&
Vref.
Y-Decoder
Address Buffer
&
Latches
X-Decoder
256Kx16
Flash Bank1
A18-A0
256Kx16
Flash Bank2
CE#
OE# Control Logic
WE#
DQ15-DQ0
I/O Buffers
&
Data Latches
Figure2: Functinaly Block Diagram
SANYO Electric Co.,Ltd. Semiconductor Company 1-15-1 Sakata Oizumi Gunma Japan
R.1.01(2/15/2000) No.xxxx-5/19
5 Page 
8 Megabit FlashBank Memory
LE28DW8102T
11
ADDRESS A18- A0
CE#
OE#
WE#
DQ15-DQ0
VIH
HIGH-Z
Figure 3: Read Cycle Timing Diagram
TRC
TAA
TCE
TOE
TOLZ
TCLZ
TOH
DATA VALID
TOHZ
TCHZ
DATA VALID
HIGH-Z
808T_ENG\F3_E
ADDRESS A18-A0
WE#
TAS
OE#
5555
TAH
TWP
2AAA
TWPH
5555
ADDR
INTERNAL PROGRAM OPERATION STARTS
TBP
TDH
TDS
CE#
DQ15-DQ0
AA
SW0
TCEH
TCES
55 A0
DATA
SW1
SW2
WORD
(ADDR/DATA)
808T\808_ENG\F4-1_E
Figure 4-1: WE# Controlled Word Program Cycle Timing Diagram
SANYO Electric Co.,Ltd. Semiconductor Company 1-11-11 Sakata Oizumi Gunma Japan
R.1.01(2/15/2000) No.xxxx-11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet LE28DW8102T.PDF ] | |
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