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PDF 2N1724 Data sheet ( Hoja de datos )
| Número de pieza | 2N1724 | |
| Descripción | (2N1722 / 2N1724) NPN SILICON HIGH POWER TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N1724 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262
Devices
2N1722
2N1724
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +1000C (2)
VCEO
VCBO
VEBO
IC
PT
Temperature Range:
Operating
TOP,
Storage Junction
Tstg
1) Derate linearly 20 mW/0C for TA between +250C and +1750C
2) Derate linearly 666 mW/0C for TC between +1000C and +1750C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Emitter-Base Breakdown Voltage
IE = 10 mAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Base Cutoff Current
VCB = 175 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Value
80
175
10
5.0
3.0
50
175
-65 to +200
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
IEBO
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
TO-61*
2N1724
TO-53*
2N1722
*See Appendix A for
Package Outline
Min. Max.
Unit
80 Vdc
10 Vdc
300 µAdc
5.0 mAdc
400 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N1724.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N1722 | (2N1722 / 2N1724) NPN SILICON HIGH POWER TRANSISTOR | Microsemi |
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| 2N1722A | (2N1722 - 2N1725) Triple Diffused Power Transistors | New Jersey Semi-Conductor |
| 2N1723 | (2N1722 - 2N1725) Triple Diffused Power Transistors | New Jersey Semi-Conductor |
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