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PDF 2SA1266 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1266 | |
| Descripción | PNP Silicon Epitaxial Planar Transistor | |
| Fabricantes | PACO | |
| Logotipo |  |
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ST 2SA1266
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O,
Y and G according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IB
Ptot
Tj
Tstg
Value
50
50
5
150
50
500
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 6 V, -IC = 2 mA
Current Gain Group
at -VCE = 6 V, -IC = 150 mA
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Transition Frequency
at -VCE = 10 V, -IC = 1 mA
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Noise Figure
at -VCE = 6 V, -IC = 0.1 V, f = 1 KHz, RG = 10 KΩ
O
Y
G
Symbol
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
fT
Cob
NF
Min.
70
120
200
25
-
-
-
-
80
-
-
Max.
140
240
400
-
0.1
0.1
0.3
1.1
-
7
10
Unit
-
-
-
-
µA
µA
V
V
MHz
pF
dB
Dated : 20/05/2010 Rev:01
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1266.PDF ] | |
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