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PDF 15N60HS Data sheet ( Hoja de datos )
| Número de pieza | 15N60HS | |
| Descripción | High Speed IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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SGB15N60HS
^
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
VCE
IC
Eoff
Tj
SGB15N60HS
600V 15A 200µJ 150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature (reflow soldering, MSL1)
Marking
Package
G15N60HS PG-TO-263-3-2
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj ,Tstg
Tj(tl)
-
Value
600
27
15
60
60
±20
±30
10
138
-55...+150
175
245
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.3 Oct 06
Free Datasheet http://www.datasheet4u.com/
1 page  
SGB15N60HS
^
40A VGE=20V
15V
13V
30A
11V
9V
20A 7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A VGE=20V
15V
13V
30A
11V
9V
20A 7V
5V
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
TJ=-55°C
40A 25°C
150°C
20A
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
5,5V
5,0V
4,5V
IC=30A
4,0V
3,5V
3,0V
IC=15A
2,5V
2,0V
IC=7.5A
1,5V
1,0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev 2.3 Oct 06
5 Page 
SGB15N60HS
^
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 12/7/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
11
Rev 2.3 Oct 06
11 Page | ||
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