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Número de pieza | C3112 | |
Descripción | NPN Transistor - 2SC3112 | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de C3112 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• High DC current gain: hFE = 600~3600
• High breakdown voltage: VCEO = 50 V
• High collector current: IC = 150 mA (max)
2SC3112
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB 30 mA
Collector power dissipation
PC 400 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-43
temperature/current/voltage and the significant change in
TOSHIBA
2-5F1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.21 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
NF (1)
NF (2)
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kΩ
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
Note: hFE classification A: 600~1800, B: 1200~3600
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
600 ⎯ 3600
⎯ 0.12 0.25 V
100 250 ⎯ MHz
⎯ 3.5 ⎯ pF
⎯ 0.5 ⎯
dB
⎯ 0.3 ⎯
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet C3112.PDF ] |
Número de pieza | Descripción | Fabricantes |
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