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Número de pieza | 2SA1432 | |
Descripción | Silicon PNP Epitaxial Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1432 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
2SA1432
Unit: mm
• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC3672
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−300
−300
−8
−100
−20
1000
150
−55 to 150
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-12-21
1 page PC – Ta
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2SA1432
Safe Operating Area
−0.5
−0.3 IC max (pulsed)
IC max (continuous)
−0.1
100 ms*
1 ms*
−0.05
−0.03
−0.01
DC operation
Ta = 25°C
−0.005
−0.003
*: Single nonrepetitive pulse
−0.001
Ta = 25°C
Curves must be derated linearly with
−0.0005 increase in temperature.
−0.0003
−1 −3 −10 −30 −100
VCEO max
−300 −1000
Collector-emitter voltage VCE (V)
5
http://store.iiic.cc/
2009-12-21
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SA1432.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SA1430 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1431 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1432 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1433 | PNP Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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