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Número de pieza | 2SA1431 | |
Descripción | Silicon PNP Epitaxial Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1431 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1431
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1431
Unit: mm
• High DC current gain and excellent hFE linearity
: hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
: hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −1.0 V (max)
(IC = −4 A, IB = −0.1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−35
−20
−8
−5
−8
−0.5
1000
150
−55 to 150
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
V (BR) EBO
VCB = −35 V, IE = 0
VEB = −8 V, IC = 0
IC = −10 mA, IB = 0
IE = −1 mA, IC = 0
hFE (1)
(Note 2)
VCE = −2 V, IC = −0.5 A
hFE (2)
VCE (sat)
VCE = −2 V, IC = −4 A
IC = −4 A, IB = −0.1 A
VBE VCE = −2 V, IC = −4 A
fT VCE = −2 V, IC = −0.5 A
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
−20 ―
―
V
−8 ― ―
V
100 ― 320
70 ― ―
―
― −1.0
V
―
― −1.5
V
― 170 ― MHz
― 62 ― pF
1 2004-07-07
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SA1431.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SA1430 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1431 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1432 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
2SA1433 | PNP Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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