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PDF 2SA1359 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1359 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA1359 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1359
Audio Frequency Power Amplifier
Low-Speed Switching
2SA1359
Unit: mm
• Suitable for the output stage of 5-watt car radios and car stereos.
• Good hFE linearity
• Complementary to 2SC3422.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−40
−40
−5
−3
−1
1.5
10
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1359.PDF ] | |
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