|
|
Número de pieza | 2SA1339 | |
Descripción | High-Speed Switching Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1339 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Ordering number:EN1392A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1339/2SC3393
High-Speed Switching Applications
Features
· Very small-sized package permitting sets to be small-
sized, slim.
· High breakdown voltage : VCEO=(–)50V.
· Complementary pair transistor having large current
capacity and high fT.
· Adoption of FBET process.
Package Dimensions
unit:mm
2033
[2SA1339/2SC3393]
Switching Time Test Circuit
( ) : 2SA1339
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)50mA
Common Base Output Capacitance
Cob VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)100mA, IB=(–)10mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)100mA, IB=(–)10mA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)10µA, IE=0
IC=(–)100µA, RBE=∞
IE=(–)10µA, IC=∞
Turn-ON Time
Storage Time
Fall Time
ton
tstg VCC=20V
IC=10IB1=–10IB2=100mA
tf
* : The 2SA1339/2SC3393 are classified by 10mA hFE as follows :
100 R 200 140 T 280 200 S 400 280 U 560
B : Base
C : Collector
E : Emitter
SANYO : SPA
Ratings
(–)60
(–)50
(–)5
(–)500
(–)800
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
100*
(–)60
(–)50
(–)5
300
(200)
3.7
(5.6)
0.1
(0.15)
0.8
70(70)
400
(400)
70(50)
max
(–)0.1
(–)0.1
560*
0.3
(0.4)
1.2
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3197KI/1114KI, MT No.1392-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SA1339.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SA1330 | HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD | NEC |
2SA1330 | PNP Silicon Epitaxial Transistor | Kexin |
2SA1330 | Transistors | TY Semiconductor |
2SA1331 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |