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PDF 2SA1316 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1316 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1316
For Low Noise Audio Amplifier Applications and
Recommended for the First Stages of MC Head
Amplifiers
2SA1316
Unit: mm
· Very low noise in the region of low signal source impedance
equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
· Low pulse noise. Low 1/f noise
· Low base spreading resistance: rbb’ = 2.0 Ω (typ.)
· Complementary to 2SC3329
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-80
-80
-5
-100
-20
400
125
-55~125
Electrical Characteristics (Ta = 25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Base spreading resistance
Transition frequency
Collector output capacitance
Noise figure
ICBO
IEBO
V (BR) CEO
VCB = -80 V, IE = 0
VEB = -5 V, IC = 0
IC = -1 mA, IB = 0
hFE
VCE = -6 V, IC = -2 mA
(Note)
VCE (sat)
VBE
rbb’
IC = -10 mA, IB = -1 mA
VCE = -6 V, IC = -2 mA
VCE = -6 V, IC = -1 mA, f = 100 MHz
fT VCE = -6 V, IC = -1 mA, f = 100 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -0.1 mA
f = 10 Hz, RG = 10 kW
VCE = -6 V, IC = -0.1 mA
NF
f = 1 kHz, RG = 10 kW
VCE = -6 V, IC = -0.1 mA
f = 1 kHz, RG = 100 W
Note: hFE classification GR: 200~400, BL: 350~700
1
Min Typ. Max Unit
¾ ¾ -0.1 mA
¾ ¾ -0.1 mA
-80 ¾
¾
V
200 ¾ 700
¾
¾ -0.1
V
¾ -0.6 ¾
V
¾ 2.0 ¾
W
¾ 50 ¾ MHz
¾ 6.2 ¾ pF
¾1
6
¾ 0.5 2 dB
¾ 2.5 ¾
2003-03-24
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1316.PDF ] | |
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