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PDF 2SA1242 Data sheet ( Hoja de datos )

Número de pieza 2SA1242
Descripción Silicon PNP Epitaxial Type Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 2SA1242 Hoja de datos, Descripción, Manual

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1242
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1242
Unit: mm
Excellent hFE linearity
: hFE (1) = 100 to 320 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 70 (min) (VCE = 2 V, IC = 4 A)
Low collector saturation voltage
: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
(Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
35
20
8
5
8
0.5
1.0
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-08-27

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