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PDF FGPF4633 Data sheet ( Hoja de datos )
| Número de pieza | FGPF4633 | |
| Descripción | PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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 1. - 330V, 300A, Transistor, TO-220F  Hay una vista previa y un enlace de descarga de FGPF4633 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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FGPF4633
330V PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
February 2010
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Potted)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
300
30.5
12.2
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.1
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
100
Figure 14. Turn-off Characteristics vs.
Collector Current
500
td(off)
tr
100
10
3
20
td(on)
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
30 40 50 60
Collector Current, IC [A]
70
10
20
tf
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
30 40 50 60
Collector Current, IC [A]
70
Figure 15. Switching Loss vs. Gate Resistance
3
Common Emitter
VCC = 200V, VGE = 15V
1 IC = 20A
TC = 25oC
TC = 125oC
Figure 16. Switching Loss vs. Collector Current
2
1
Eoff
Eoff
0.1
0.03
0
Eon
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 17. Turn off Switching SOA Characteristics
500
0.1
0.01
20
Eon
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
30 40 50 60
Collector Current, IC [A]
70
100
10
1
0.1
1
Safe Operating Area
VGE = 15V, TC = 125oC
10 100
Collector-Emitter Voltage, VCE [V]
500
FGPF4633 Rev. A
5 www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FGPF4633.PDF ] | |
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