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PDF FDPF16N50U Data sheet ( Hoja de datos )
| Número de pieza | FDPF16N50U | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDP16N50U / FDPF16N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 15 A, 480 mΩ
April 2013
Features
• R DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A
• Low Gate Charge (Typ. 32 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET is
tailored to reduce on-state resistance, and to provide better switching
performance and higher avalanche energy strength. UniFET Ultra
FRFETTM MOSFET has much superior body diode reverse recovery
performance. Its trr is less than 50nsec and the reverse dv/dt immunity is
20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/
nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove
additional component and improve system reliability in certain
applications that require performance improvement of the MOSFET’s
body diode. This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
D
G
D
S
TO-220
G
D
S
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Typ.
Thermal Resistance, Junction to Ambient, Max.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP16N50U FDPF16N50UT
500
±30
15 15*
9 9*
60 60*
610
15
20
20
200 38.5
1.59 0.3
-55 to +150
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
300 oC
FDP16N50U
0.63
0.5
62.5
FDPF16N50UT
3.3
-
62.5
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDPF16N50U.PDF ] | |
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