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PDF FDMS8680 Data sheet ( Hoja de datos )

Número de pieza FDMS8680
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS8680 Hoja de datos, Descripción, Manual

FDMS8680
N-Channel PowerTrench® MOSFET
30V, 35A, 7.0m
Features
„ Max rDS(on) = 7.0mat VGS = 10V, ID = 14A
„ Max rDS(on) = 11.0mat VGS = 4.5V, ID = 11.5A
„ Advanced Package and Silicon combination for
low rDS(on) and high efficiency
„ MSL1 robust package design
„ RoHS Compliant
July 2007
General Description
The FDMS8680 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
„ High Side for Synchronous Buck to Power Core Processor
„ Secondary Side Synchronous Rectifier
„ High Side Switch in POL DC/DC Converter
„ Oring FET/ Load Switch
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
35
63
14
100
216
50
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.5
50
°C/W
Device Marking
FDMS8680
Device
FDMS8680
Package
Power 56
Reel Size
13"
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FDMS8680 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-4
SINGLE PULSE
RθJA = 125oC/W
10-3
10-2
10-1 100
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
101 102
Figure 13. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
5
www.fairchildsemi.com

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