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PDF FDMS8674 Datasheet ( Hoja de datos )

Número de pieza FDMS8674
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo

Total 6 Páginas
		
FDMS8674 Hoja de datos, Descripción, Manual
November 2007
FDMS8674
N-Channel PowerTrench® MOSFET
30V, 21A, 5.0m
tm
Features
General Description
„ Max rDS(on) = 5.0mat VGS = 10V, ID = 17A
„ Max rDS(on) = 8.0mat VGS = 4.5V, ID = 14A
„ Advanced Package and Silicon combination
for low rDS(on) and high efficiency
„ MSL1 robust package design
„ RoHS Compliant
The FDMS8674 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
„ Computing VR & IMVP Vcore
„ Secondary Side Synchronous Buck
„ POL DC-DC Converter
„ Oring FET / Load Switch
Pin 1
S
S
S
G
D
D
DD
Power 56 (Bottom View)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
21
94
17
150
181
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS8674
Device
FDMS8674
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMS8674 Rev.B
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

1 page

FDMS8674 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-3
SINGLE PULSE
RθJA = 125oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 13. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDMS8674 Rev.B
5
www.fairchildsemi.com

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