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Número de pieza | FDMS8660AS | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMS8660AS (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! May 2009
FDMS8660AS
N-Channel PowerTrench® SyncFETTM
30V, 49A, 2.1m:
tm
Features
General Description
Max rDS(on) = 2.1m: at VGS = 10V, ID = 28A
Max rDS(on) = 3.1m: at VGS = 4.5V, ID = 22A
Advanced Package and Silicon combination
for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
The FDMS8660AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 2)
(Note 1a)
Ratings
30
±20
49
179
28
200
726
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS8660AS
Device
FDMS8660AS
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2009 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RTJA = 125oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 13. Transient Thermal Response Curve
103
©2009 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDMS8660AS.PDF ] |
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