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PDF FDMS86252 Data sheet ( Hoja de datos )

Número de pieza FDMS86252
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS86252 Hoja de datos, Descripción, Manual

FDMS86252
N-Channel PowerTrench® MOSFET
150 V, 16 A, 51 mΩ
August 2010
Features
General Description
„ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
„ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
„ Advanced package and silicon combination for low rDS(on) and
high efficiency
„ MSL1 robust package design
„ 100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
„ RoHS Compliant
Top Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
16
24
4.6
20
50
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
50
°C/W
Device Marking
FDMS86252
Device
FDMS86252
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FDMS86252 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C
5
www.fairchildsemi.com

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