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PDF FDMS8622 Data sheet ( Hoja de datos )
| Número de pieza | FDMS8622 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2011
FDMS8622
N-Channel Power Trench® MOSFET
100 V, 16.5 A, 56 mΩ
Features
Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A
Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
POE Protection Switch
DC-DC Switch
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
Power 56
D
D
DD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
100
±20
16.5
17
4.8
30
12
31
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
4
50
°C/W
Device Marking
FDMS8622
Device
FDMS8622
Package
Power56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8622 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (s)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
FDMS8622 Rev.C
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS8622.PDF ] | |
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