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PDF FDMS86200 Data sheet ( Hoja de datos )

Número de pieza FDMS86200
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS86200 Hoja de datos, Descripción, Manual

November 2012
FDMS86200
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
General Description
„ Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
„ Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
Application
„ DC-DC Conversion
„ RoHS Compliant
Top Bottom
Pin 1
S
S
S
G
S
S
Power 56
D
D
D
D
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
49
9.6
100
220
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86200
Device
FDMS86200
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86200 Rev.C3
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FDMS86200 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-3
SINGLE PULSE
RθJA = 125 oC/W
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Transient Thermal Response Curve
1000
FDMS86200 Rev.C3
5 www.fairchildsemi.com

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