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Número de pieza | FDMS86150 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMS86150 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! October 2012
FDMS86150
N-Channel PowerTrench® MOSFET
100 V, 60 A, 4.85 mΩ
Features
General Description
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
MSL1 robust package design
100% UIL tested
RoHS Compliant
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 56
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
60
16
300
726
156
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86150
Device
FDMS86150
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86150 Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 115 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMS86150 Rev.C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMS86150.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMS86150 | N-Channel MOSFET | Fairchild Semiconductor |
FDMS86150ET100 | MOSFET ( Transistor ) | Fairchild Semiconductor |
FDMS86152 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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