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PDF FDMS86104 Data sheet ( Hoja de datos )
| Número de pieza | FDMS86104 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS86104
N-Channel PowerTrench® MOSFET
100 V, 16 A, 24 mΩ
Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
October 2012
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
Top Bottom
Pin 1
S
S
D
S
S
G
S
D
Power 56
D
D
D
D
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
16
7
30
96
73
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.7
50
°C/W
Device Marking
FDMS86104
Device
FDMS86104
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86104 Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.0001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
100
80
60
40
20
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 14. Power Vs Case Temperature
1000
175
©2012 Fairchild Semiconductor Corporation
FDMS86104 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS86104.PDF ] | |
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