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PDF 7N60L Data sheet ( Hoja de datos )
| Número de pieza | 7N60L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
7N60L
7.4 Amps, 600Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 7N60L is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
7N60LL-x-TA3-T
7N60LG-x-TA3-T
7N60LL-x-TF1-T
7N60LG-x-TF1-T
7N60LL-x-TF3-T
7N60LG-x-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-189.D
1 page  
7N60L
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-189.D
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 7N60L.PDF ] | |
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