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PDF 2SA1013 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1013 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1013
Color TV Verttical Deflection Output Applications
Power Switching Applications
2SA1013
Unit: mm
• High voltage: VCEO = −160 V
• Large continuous collector current capability
• Recommended for vertical deflection output & sound output
applications for line-operated TV.
• Complementary to 2SC2383.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
−160
−160
−6
−1
−0.5
900
150
−55 to 150
Electrical Characteristics (Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −150 V, IE = 0
IEBO
VEB = −6 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (Note) VCE = −5 V, IC = −200 mA
VCE (sat) IC = −500 mA, IB = −50 mA
VBE VCE = −5 V, IC = −5 mA
fT VCE = −5 V, IC = −200 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification R: 60 to 120, O: 100 to 200
Min Typ. Max Unit
⎯ ⎯ −1.0 µA
⎯ ⎯ −1.0 µA
−160 ⎯
⎯
V
60 ⎯ 200
⎯
⎯ −1.5
V
−0.45 ⎯ −0.75 V
15 50 ⎯ MHz
⎯ ⎯ 35 pF
Marking
A1013
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1013.PDF ] | |
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