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PDF TA0012 Data sheet ( Hoja de datos )
| Número de pieza | TA0012 | |
| Descripción | High Efficiency HBT GSM Power Amplifier | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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TA0012
TA0012
RF2123: New High Power, High Efficiency HBT GSM Power Amplifier
RF Micro Devices introduces a new power amplifier for
GSM applications based on revolutionary HBT (Het-
erojunction Bipolar Transistor) technology. This power
amplifier operates from a single 4.8V or 6V power sup-
ply without the need for a negative voltage. The power
output at 4.8V is 35dBm, and at 6V the PA provides
36dBm! The overall efficiency is as high as 62 percent.
On-board power control is included, as is power down.
The part is packaged in an industry standard 16-lead
SOIC with 4 fused, wide leads.
With the maturation of digital cellular systems in
Europe, Japan, and North America, next generation
handsets must offer advantages to the consumer.
These generally take the form of lower cost, smaller
size, and longer battery life.
One component which has traditionally been either
expensive, large, power-hungry, or any combination of
these has been the RF power amplifier. This critical
component governs much of the battery life, size, ease
of implementation, and manufacturability of the phone.
For 5-cell applications between 5.3V and 6.0V, this
function can now be performed using HBT (Hetero-
junction Bipolar Transistor) technology from RF Micro
Devices. The new RF2123 GSM power amplifier pro-
vides all of these advantages to the handset designer,
amplifying a +6dBm input signal to over +35dBm out-
put, at up to 60 percent efficiency. Moreover, no nega-
tive voltage is required, either internal or externally
generated. Additionally, an on-board analog gain con-
trol provides greater than 60dB of power control from
1V to 4V control voltage. When the control is reduced
to <0.5V, the part is shut off, drawing less than 1mA.
The HBT Power Amplifier drives several key features of
the phone operation and design. Some are advantages
to the end customer, such as talk time and overall
phone size. Others are related to the ease of design
and manufacturing the phone, such as single voltage
supply, on-board power-down, and on-board power
control. These advantages are discussed below:
• Talk time. The current consumption of the transmit-
ter is dominated by the power amplifier. For battery
operated applications, the power-added (or total)
efficiency is extremely important. Sixty percent total
efficiency for a two-stage, 30dB gain GSM power
amplifier IC is ideal for maximizing talk time – a key
performance advantage at the competitive system
level.
• Small Package Size. As cellular phone sizes shrink,
the available real estate for RF components shrinks
as well. Traditional power amplifier designs become
difficult to implement in the required area; thus the
SOIC packaged, integrated amplifier approach is
extremely beneficial. The RF2123 takes the place of
a large discrete implementation, or a MESFET IC
implementation with additional components such as
a negative voltage generator and a supply-side
switch. The unique “Quad BatWing” package pio-
neered by RF Micro Devices allows superior heat-
sinking and electrical grounding. This allows over 4-
W of output power to be transmitted in GSM mode
with no special heat slug or non-standard packag-
ing.
http://www.DataSheet4U.com/
•
No Negative Voltage. HBT is a unique technology,
allowing performance better than GaAs MESFETs,
yet allowing biasing similar to Silicon Bipolar from a
single positive voltage. This eliminates one of the
primary disadvantages with GaAs MESFETs – the
requirement for a negative voltage. For a system
de-signer to implement negative voltage with suffi-
cient current to drive a MESFET gate, some kind of
switching regulator or “charge pump” must be used.
This can be expensive and cumbersome. If the
charge pump is implemented on-chip, excessive
low-frequency noise, additional leakage current,
and additional external components minimize the
benefit.
• HBT provides an elegant solution to the high-effi-
ciency power amplifier. With no need for additional
components, the part provides an overall smaller,
more efficient, and lower cost solution.
• No supply-side switch. The RF2123 HBT Power
Amplifier provides a single pin for power down. This
function powers down the part with less than 0.5V
on the control pin, and provides full power with 4V
on the control. In power-down mode, less than 1mA
of total current is consumed, allowing very long
stand-by times for the phone.
13
Copyright 1997-2000 RF Micro Devices, Inc.
13-63
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TA0012.PDF ] | |
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