DataSheet.es    


PDF TC2281 Data sheet ( Hoja de datos )

Número de pieza TC2281
Descripción Low Noise and High Dynamic Range Packaged GaAs FETs
Fabricantes Transcom 
Logotipo Transcom Logotipo



Hay una vista previa y un enlace de descarga de TC2281 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! TC2281 Hoja de datos, Descripción, Manual

TC2281
REV4_20070504
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
! 0.5 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! 21.5 dBm Typical Power at 12 GHz
! 12 dB Typical Linear Power Gain at 12 GHz
! Breakdown Voltage : BVDGO 9 V
! Lg = 0.25 µm, Wg = 300 µm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
! Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
NF
Ga
P1dB
GL
IDSS
gm
VP
BVDGO
Rth
Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz
http://www.DataSheet4U.net/
Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz
Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA
Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.6mA
Drain-Gate Breakdown Voltage at IDGO = 0.15mA
Thermal Resistance
MIN
10
20.5
11
9
TYP
0.5
12
21.5
12
90
100
-1.0*
12
150
MAX
0.7
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
IGS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
IDSS
300 µA
21 dBm
400 mW
175 °C
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 25 mA
Frequency NFopt
(GHz)
(dB)
GA
(dB)
Γopt
MAG ANG
Rn/50
2 0.35 24.8 0.83 38 0.40
4 0.38 19.2 0.73 75 0.32
6 0.40 16.0 0.66 105 0.26
8 0.46 13.7 0.60 130 0.21
10 0.52 12.1 0.55 154 0.17
12 0.57 11.1 0.50 180 0.15
14 0.69 10.6 0.47 -153 0.14
16 0.82 10.4 0.44 -121 0.15
18 1.02 10.3 0.40 -81 0.17
* For the tight control of the pinch-off voltage range, we divide TC2281 into 3 model numbers to fit customer design requirement
(1)TC2281P0710 : Vp = -0.7V to -1.0V (2)TC2281P0811 : Vp = -0.8V to -1.1V (3)TC2281P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4
datasheet pdf - http://www.DataSheet4U.net/

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet TC2281.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
TC2281Low Noise and High Dynamic Range Packaged GaAs FETsTranscom
Transcom
TC2282Low Noise Ceramic Packaged PHEMT GaAs FETsTranscom
Transcom

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar