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PDF NCV8873 Data sheet ( Hoja de datos )
| Número de pieza | NCV8873 | |
| Descripción | Automotive Grade Non-Synchronous Boost Controller | |
| Fabricantes | ON Semiconductor | |
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NCV8873
Automotive Grade
Non-Synchronous Boost
Controller
The NCV8873 is an adjustable output non−synchronous boost
controller which drives an external N−channel MOSFET. The device
uses peak current mode control with internal slope compensation. The
IC incorporates an internal regulator that supplies charge to the gate
driver.
Protection features include internally−set soft−start, undervoltage
lockout, cycle−by−cycle current limiting and thermal shutdown.
Additional features include low quiescent current sleep mode and
externally−synchronizable switching frequency.
Features
• Peak Current Mode Control with Internal Slope Compensation
• 0.2 V $3% Reference Voltage for Constant Current Loads
• Fixed Frequency Operation
• Wide Input Voltage Range of 3.2 V to 40 V, 45 V Load Dump
• Input Undervoltage Lockout (UVLO)
• Internal Soft−Start
• Low Quiescent Current in Sleep Mode
• Cycle−by−Cycle Current Limit Protection
• Hiccup−Mode Overcurrent Protection (OCP)
• Thermal Shutdown (TSD)
• This is a Pb−Free Device
www.onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAM
8
8873xx
ALYW
G
1
8873xx = Specific Device Code
xx = 00 or 01
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
PIN CONNECTIONS
EN/SYNC 1
ISNS 2
GND 3
GDRV 4
8 VFB
7 VC
6 VIN
5 VDRV
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCV887300D1R2G SOIC−8 2500 / Tape &
(Pb−Free)
Reel
NCV887301D1R2G SOIC−8 2500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 6
1
Publication Order Number:
NCV8873/D
1 page  
NCV8873
ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min Typ Max Unit
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
VEA output resistance
VFB input bias current
Reference voltage
VEA maximum output voltage
VEA minimum output voltage
VEA sourcing current
VEA sinking current
GATE DRIVER
gm,vea
Ro,vea
Ivfb,bias
Vref
Vc,max
Vc,min
Isrc,vea
Isnk,vea
VFB – Vref = ± 20 mV
Current out of VFB pin
VEA output current, Vc = 2.0 V
VEA output current, Vc = 0.7 V
0.8
2.0
−
0.194
2.5
−
80
80
1.2
−
0.5
0.200
−
−
100
100
1.63
−
2.0
0.206
−
0.3
−
−
mS
MW
mA
V
V
V
mA
mA
Sourcing current
Isrc VDRV ≥ 6 V, VDRV − VGDRV = 2 V
YY = 00
YY = 01
600 800
600 800
−
−
mA
Sinking current
Isink VGDRV ≥ 2 V
YY = 00
YY = 01
500 600
500 600
−
−
mA
Driving voltage dropout
Driving voltage source current
Backdrive diode voltage drop
Driving voltage
Vdrv,do
Idrv
Vd,bd
VDRV
VIN − VDRV, IvDRV = 25 mA
VIN − VDRV = 1 V
VDRV − VIN, Id,bd = 5 mA
IVDRV = 0.1 − 25 mA
YY = 00
YY = 01
− 0.3 0.6
35 45
−
− − 0.7
6.0 6.3 6.6
6.0 6.3 6.6
V
mA
V
V
UVLO
Undervoltage lock−out,
Threshold voltage
Vuvlo
VIN falling
2.95 3.05 3.15
V
Undervoltage lock−out,
Hysteresis
Vuvlo,hys
VIN rising
50 150 250 mV
THERMAL SHUTDOWN
Thermal shutdown threshold
Thermal shutdown hysteresis
Thermal shutdown delay
Tsd
Tsd,hys
tsd,dly
TJ rising
TJ falling
From TJ > Tsd to stop switching
160 170 180
10 15 20
− − 100
°C
°C
ns
www.onsemi.com
5
5 Page 
NCV8873
PACKAGE DIMENSIONS
−X−
A
SOIC−8 NB
CASE 751−07
ISSUE AK
B
−Y−
−Z−
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
J
0.25 (0.010) M Z Y S X S
SOLDERING FOOTPRINT*
1.52
0.060
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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www.onsemi.com
11
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
NCV8873/D
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet NCV8873.PDF ] | |
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