PDF 2N7288R Data sheet ( Hoja de datos )

Número de pieza	2N7288R
Descripción	Radiation Hardened N-Channel Power MOSFETs
Fabricantes	Intersil Corporation
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SEMICONDUCTOR REGISTRATION PENDING Available as FRS244 (D, R, H) November 1994 2N7288D, 2N7288R 2N7288H Radiation Hardened N-Channel Power MOSFETs Features • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current • Neutron • Single Event - Meets Pre-Rad Speciﬁcations to 100KRAD(Si) - Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically - Survives 2E12 Typically If Current Limited to IDM - 7.0nA Per-RAD(Si)/sec Typically - Pre-RAD Speciﬁcations for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 - Typically Survives 1E5ions/cm2 Having an LET ≤ 35MeV/mg/cm2 and a Range ≥ 30µm at 80% BVDSS Description The Harris Semiconductor Sector has designed a series of SECOND GENERA- TION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod- uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim- iting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage. Package Symbol This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S- 19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired deviations from the data sheet. TO-257AA Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Speciﬁed Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain-Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 2N7288D, R, H 250 250 9 6 27 ±20 75 30 0.60 27 9 27 -55 to +150 300 UNITS V V A A A V W W W/oC A A A oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright © Harris Corporation 1992 1 File Number 3256.1 1 page 2N7288D, 2N7288R, 2N7288H - Registration Pending Packaging E ØP Q H1 D L1 L 0.065 R TYP. b 12 e e1 3 A TO-257AA A1 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.190 0.200 4.83 5.08 - A1 0.035 0.045 0.89 1.14 - Øb 0.025 0.035 0.64 0.88 2, 3 Øb1 0.060 0.090 1.53 2.28 D 0.645 0.665 16.39 16.89 - - E 0.410 0.420 10.42 10.66 - Øb1 e 0.100 TYP 2.54 TYP 4 e1 0.200 BSC 5.08 BSC H1 0.230 0.250 5.85 6.35 J1 0.110 0.130 2.80 3.30 L 0.600 0.650 15.24 16.51 4 - 4 - J1 L1 - 0.035 - 0.88 - ØP 0.140 0.150 3.56 3.81 - Q 0.113 0.133 2.88 3.37 - NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-257AA dated 9-88. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.150 inches (3.81mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. 5 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
2N7288D	Radiation Hardened N-Channel Power MOSFETs	Intersil Corporation
2N7288H	Radiation Hardened N-Channel Power MOSFETs	Intersil Corporation
2N7288R	Radiation Hardened N-Channel Power MOSFETs	Intersil Corporation

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