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PDF BLF2425M7L140 Data sheet ( Hoja de datos )
| Número de pieza | BLF2425M7L140 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF2425M7L140;
BLF2425M7LS140
Power LDMOS transistor
Rev. 3 — 6 September 2012
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production
test circuit.
Test signal
f
(MHz)
VDS
PL(AV)
(V) (W)
Gp
(dB)
D
(%)
CW
2450
28 140
18.5 52
1.2 Features and benefits
High efficiency
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High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz
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1 page  
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
Table 9. List of components
For test circuit see Figure 2.
Component Description
C1, C4, C5 multilayer ceramic chip capacitor
C2, C6
multilayer ceramic chip capacitor
C3 multilayer ceramic chip capacitor
C7 multilayer ceramic chip capacitor
C8 electrolytic capacitor
R1 resistor
7.4 Graphical data
Value
15 pF
10 F, 50 V
100 nF
62 pF
22 F, 63 V
10
Remarks
ATC100B
Murata
Murata
ATC100B
SMD 0805; Bourns
*S
G%
DDD
Ș'
*S
G%
DDD
Ș'
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3/ G%P
3/ :
VDS = 28 V; IDq = 1300 mA.
(1) Gp at f = 2400 MHz
(2) Gp at f = 2450 MHz
(3) Gp at f = 2500 MHz
(4) D at f = 2400 MHz
(5) D at f = 2450 MHz
(6) D at f = 2500 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
VDS = 28 V; IDq = 1300 mA.
(1) Gp at f = 2400 MHz
(2) Gp at f = 2450 MHz
(3) Gp at f = 2500 MHz
(4) D at f = 2400 MHz
(5) D at f = 2450 MHz
(6) D at f = 2500 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values
BLF2425M7L140; BLF2425M7LS140
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 September 2012
© NXP B.V. 2012. All rights reserved.
5 of 11
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NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Circuit information. . . . . . . . . . . . . . . . . . . . . . . 4
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Handling information. . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
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14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF2425M7L(S)140
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 September 2012
Document identifier: BLF2425M7L140; BLF2425M7LS140
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