DataSheet.es    


PDF 2N7218 Data sheet ( Hoja de datos )

Número de pieza 2N7218
Descripción JANTX/ JANTXV POWER MOSFET IN TO-254AA PACKAGE
Fabricantes ETC 
Logotipo ETC Logotipo



Hay una vista previa y un enlace de descarga de 2N7218 (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! 2N7218 Hoja de datos, Descripción, Manual

2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/596
100V Thru 500V, Up to 28A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
F E AT U R E S
• Repetitive Avalanche Rating
• Isolated and Hermetically Sealed
• Low RDS(on)
• Ease of Paralleling
• Ceramic Feedthroughs
• Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. Itis
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25°C
PART NUMBER
2N7218
2N7219
2N7221
2N7222
S C H E M ATIC
VDS, Volts
100
200
400
500
R DS(on)
.070
.18
.55
.85
ID, A m p s
28
18
10
8
MECHANICAL OUTLINE
.144 DIA.
.545
.535
.685
.665
.800
.790
123
.550
.530
.050
.040
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.045
.035
.550
.510
.150 TYP.
.005
.260
.249
.150 TYP.
7 03 R0
3.1- 1

1 page




2N7218 pdf
2N7218, JANTX2N7218, JANTXV2N7218
2N7219, JANTX2N7219, JANTXV2N7219
2N7221, JANTX2N7221, JANTXV2N7221
2N7222, JANTX2N7222, JANTXV2N7222
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted
Parameter
JANTXV, JANTX, 2N7222
Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
ID M Pulsed Drain Current1
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
8.0 A
5.0 A
32 A
125 W
1.0 W/°C
VG S Gate-Source Voltage
± 20 V
EAS
Single Pulse Avalanche Energy 2
700 4
mJ
IA R Avalanche Current1
8.0 4
A
EA R
Repetitive Avalanche Energy1
12.5 4
mJ
TJ Operating Junction
-55 to 150
°C
TSTG Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
B VDSS
R DS(on)
VGS(th)
IDSS
IG S S
IG S S
Q G(on)
QGS
Q Gd
tD(on)
tr
tD(off)
tr
Drain-Source
Breakdown Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward
Gate -to-Source Leakage Reverse
On-state Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
500
---
---
2.0
---
---
---
---
---
---
---
---
---
---
---
Typ. Max. Units
V
--- 0.85
--- 0.95
--- 4.0 V
--- 25
µA
--- 250
--- 100 nA
--- -100 nA
--- 68.5 nC
--- 12.5 nC
--- 42.4 nC
--- 21 ns
--- 73 ns
--- 72 ns
--- 51 ns
Test Conditions
VG S =0V,ID =1.0 mA,
VG S = 10 V, ID = 5.0 A 3
VG S = 10 V, ID = 8.0 A 3
VDS = VG S,ID = 250 µA
VDS = 400 V, VG S = 0V
VDS = 400 V, VG S = 0V, TJ = 125°C
VG S = 20 V
VG S = -20 V
VG S = 10 V, ID = 8.0A
VDS = 250 V
See note 4
VD D = 250 V, ID = 5.0A, RG = 9.1
See note 4
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
VSD Diode Forward Voltage
ttrr Reverse Recovery Time
--- --- 1.5 V
--- --- 700 ns
Thermal Resistance
Parameter
R thJC
R thCS
R thJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min. Typ. Max. Units
--- --- 1.0
--- 0.21 --- °C/W
--- --- 48
Test Conditions
TJ = 25°C, IS = 8.0A 3,VG S = 0 V
TJ = 25°C, IF= 8.0A,di/dt<100A/µs 3
Test Conditions
Mounting surface flat,
smooth, and greased
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VD D= 50V, Starting TJ = 25°C,L > 20 mH, RG = 25 , Peak IL = 8A
3. Pulse width < 300 µs; Duty Cycle < 2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet 2N7218.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2N7218JANTX/ JANTXV POWER MOSFET IN TO-254AA PACKAGEETC
ETC
2N7219JANTX/ JANTXV POWER MOSFET IN TO-254AA PACKAGEETC
ETC
2N7219NCHANNEL POWER MOSFETSeme LAB
Seme LAB

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar