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Número de pieza | 2N7051 | |
Descripción | NPN Epitaxial Silicon Transistor | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7051 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2N7051
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
• Sourced from Process 06.
• See 2N7052 for Characteristics.
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
TJ, TSTG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
100
100
12
1.5
-55 ~ 150
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage *
BVCBO
Collector-Base Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
ICES
IEBO
Emitter Cut-off Current
On Characteristics *
IC = 1.0mA, IB = 0
IC = 100µA, IB = 0
IE = 1.0mA, IC = 0
VCB = 80V, IE = 0
VCE = 80V, IE = 0
VEB = 7.0V, IC = 0
hFE DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 5.0V, IC = 100mA
VCE = 5.0V, IC = 1.0A
IC = 100mA, IB = 0.1mA
IC = 100mA, VBE =5.0V
fT Transition Frequency
hfe Small Signal Current Gain
IC = 100mA, VCE =5.0V
VCE =5.0V, IC = 100mA,
f = 20MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Min. Typ. Max. Units
100 V
100 V
12 V
0.1 µA
0.2 µA
0.1 µA
10,000
1,000
20,000
1.5
2.0
V
V
200 MHz
10 100
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N7051.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N7051 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
2N7052 | NPN Darlington Transistor | Fairchild Semiconductor |
2N7052 | Trans Darlington NPN 100V 1.5A 3-Pin TO-92 Bulk | New Jersey Semiconductor |
2N7053 | NPN Darlington Transistor | Fairchild Semiconductor |
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