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Datasheet 2N7002DW Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N7002DW | Dual N-channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETs
2N7002DW
V(BR)DSS
60 V
Dual N-channel MOSFET
RDS(on)MAX
5Ω@10V
7Ω@5V
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch
z Rugged and reliable
z High saturation | JCET | mosfet |
2 | 2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT
2N7002DWA
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON)
8Ω @ VGS = 5V 6Ω @ VGS = 10V
Package SOT363
ID TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior | Diodes Incorporated | transistor |
3 | 2N7002DW | Dual N-Channel MOSFET 2N7002DW
Dual N-Channel MOSFET
3 2 1
6 5
4
Features:
*Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns
1
2
3
4
5
6
SOT-363(SC-88)
Mechanical Data:
*Case: SOT-363, Molded Plastic *Case Material- | Weitron Technology | mosfet |
4 | 2N7002DW | N-Channel Enhancement Mode Field Effect Transistor 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor
January 2015
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output | Fairchild Semiconductor | transistor |
5 | 2N7002DW | Small-Signal-Transistor OptiMOS™ Small-Signal-Transistor
Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21
2N7002DW
Product Summary
VDS RDS(on),max
ID | Infineon Technologies | transistor |
2N7 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N70 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T Unisonic Technologies mosfet | | |
2 | 2N70-M | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist Unisonic Technologies mosfet | | |
3 | 2N7000 | N-CHANNEL MOSFET 2N7000
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current.
用途 / Applic BLUE ROCKET ELECTRONICS mosfet | | |
4 | 2N7000 | Small Signal MOSFET 2N7000
Small Signal MOSFET
200 mA, 60 V N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 MΩ)
Gate-source Voltage Drain Current
Continuous Non-repetitive ( tp ≤ 50 � SEMTECH mosfet | | |
5 | 2N7000 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Vol KEC transistor | | |
6 | 2N7000 | Small Signal MOSFET WEITRON
Small Signal MOSFET N-Channel
3 DRAIN
Features:
*Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns
2 GATE
1 SOURCE
2N7000
TO-92
1. SOURCE 2. GATE 3. DRAIN
1 2 3
Maximum Ratings (TA=25 C Unless WEITRON mosfet | | |
7 | 2N7000 | N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives.
D
SEATING PLANE
b1
TO-92
E S1
SeCoS mosfet | |
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