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PDF K210 Data sheet ( Hoja de datos )

Número de pieza K210
Descripción MOSFET ( Transistor ) - 2SK210
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! K210 Hoja de datos, Descripción, Manual

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications
VHF Band Amplifier Applications
2SK210
Unit: mm
High power gain: GPS = 24dB (typ.) (f = 100 MHz)
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDO
IG
PD
Tj
Tstg
18
10
100
125
55~125
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3F1C
absolute maximum ratings.
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Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = −1.0 V, VDS = 0 V
V (BR) GDO IG = −100 μA
IDSS
(Note)
VGS = 0 V, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 μA
Yfs
VGS = 0 V, VDS = 10 V, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Crss
GPS
NF
VGD = −10 V, f = 1 MHz
VDD = 10 V, f = 100 MHz (Figure 1)
VDD = 10 V, f = 100 MHz (Figure 1)
⎯ ⎯ −10 nA
18
V
3 24 mA
1.2 3
V
7 mS
3.5 pF
⎯ ⎯ 0.65 pF
24 dB
1.8 3.5 dB
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
1 2007-11-01
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2SK210
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