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PDF 2N7002 Data sheet ( Hoja de datos )

Número de pieza 2N7002
Descripción N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo

2n7002-mosfet


1. 60V, N-ch, MOSFET - PanJit






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No Preview Available ! 2N7002 Hoja de datos, Descripción, Manual

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt VCEO
PARTMARKING DETAIL – 702
2N7002
S
D
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60 V
Continuous Drain Current at Tamb=25°C
ID
115 mA
Pulsed Drain Current
IDM 800 mA
Gate-Source Voltage
VGS ± 40 V
Power Dissipation at Tamb=25°C
Ptot
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V ID=10µA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1
2.5 V
ID=250mA, VDS= VGS
Gate-Body Leakage
IGSS
10 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
1 µA VDS=48V, VGS=0V
500 µA VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
500
mA VDS=25V, VGS=10V
Static Drain-Source On-State VDS(on)
Voltage (1)
3.75 V
VGS=10V, ID=500mA
375 mV VGS=5V, ID=50mA
Static Drain-Source On-State RDS(on)
Resistance (1)
7.5
7.5
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Forward Transconductance
(1)(2)
gfs
80
mS VDS=25V, ID=500mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
50 pF
25 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5 pF
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
t(on)
t(off)
20 ns VDD 30V, ID=200mA
20 ns Rg=25, RL=150
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3-2

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