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PDF 2N7002 Data sheet ( Hoja de datos )

Número de pieza 2N7002
Descripción N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricantes Pan Jit International Inc. 
Logotipo Pan Jit International Inc. Logotipo

2n7002-mosfet


1. 60V, N-ch, MOSFET - PanJit






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2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts
CURRENT 115 mAmp
PACKAGE
DESCRIPTION
• N-channel enhancement mode field effect transistor, designed for high speed pulsed
amplifier and driver applications, which is manufactored by the N-Channel DMOS
process.
FEATURES
• High density cell design for low RDS(ON).
• Voltage controlled small signal switching.
• Rugged and reliable.
• High saturation current capability.
• High-speed switcing.
• CMOS logic compatible input.
• Not thermal runaway.
• No secondary breakdown.
SOT-23
D
ABSOLUTE MAXIMUM RATINGS
TA = 25OC Unless otherwise noted.
Drain-Source Voltage
Parameter
Drain-Gate Voltage (Rgs 1M)
Gate Source Voltage -Continuous
-No Repetitive (tp<50µs)
Maximum Drain Current -Continuous
-Pulsed
Maximum POwer Dissipation Derated Above 25OC
Operation and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Symbol
V DSS
VDRG
V GSS
ID
PD
TJ , TSTG
RθJA
G
S
2N7002
60
60
± 20
± 20
115
800
200
-55 to +150
625
Units
V
V
V
mA
mW
mW / OC
OC / W
Part Number: 2N7002
PAGE 1

1 page




2N7002 pdf
RATING and CHARACTERISTIC CURVES
3
2
1
0.5
0.1
0.05
0.01
0.005
1
VGS=10V, Single Pulse
TA=25OC
RDS(ON) Limit
100ms
1ms
10ms
100ms
DC 10s 1s
2 5 10 20 30
VDS, Drain-Source Voltage (V)
60 80
Maximum Safe Operating Area
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
Switching Test Circuit
td(on)
ton
tr
90%
td(off)
toff
tf
90%
VOUT
VIN
10%
10%
90%
50% 50%
Pulse Width
10%
Inverted
Switching Waveforms
Part Number: 2N7002
PAGE 5

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