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PDF 2N7000 Data sheet ( Hoja de datos )
| Número de pieza | 2N7000 | |
| Descripción | DMOS Transistors (N-Channel) | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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 1. 60-V (D-S) MOSFET - Vishay  Hay una vista previa y un enlace de descarga de 2N7000 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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2N7000
DMOS Transistors (N-Channel)
TO-92
.181 (4.6)
.142 (3.6)
max.∅ .022 (0.55)
.098 (2.5)
SD
G
Dimensions in inches and (millimeters)
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Drain-Source Voltage
VDSS
60
Drain-Gate Voltage
VDGS
60
Gate-Source Voltage (pulsed)
VGS ± 20
Drain Current (continuous)
ID 300
Power Dissipation at Tamb = 25 °C
Ptot 8301)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
mA
mW
°C
°C
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.5 A, Tj = 25 °C
Symbol
IF
VF
Value
500
850
Unit
mA
mV
4/98
1 page  
RATINGS AND CHARACTERISTIC CURVES 2N7000
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N7000.PDF ] | |
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