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PDF 2N7000 Data sheet ( Hoja de datos )

Número de pieza 2N7000
Descripción 60V, 200mA, N-channel MOSFET
Fabricantes Motorola Inc 
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2n7000-mosfet


1. 60-V (D-S) MOSFET - Vishay






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No Preview Available ! 2N7000 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2N7000
Motorola Preferred Device
2
GATE
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
— Continuous
— Non–repetitive (tp 50 µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Value
60
60
± 20
± 40
200
500
350
2.8
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16from case
for 10 seconds
TJ, Tstg
– 55 to +150
Symbol
RθJA
TL
Max
357
300
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
1 SOURCE
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
°C
Unit
°C/W
°C
Symbol
V(BR)DSS
IDSS
IGSSF
VGS(th)
rDS(on)
VDS(on)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min Max Unit
60 — Vdc
— 1.0 µAdc
— 1.0 mAdc
— –10 nAdc
0.8 3.0 Vdc
Ohm
— 5.0
— 6.0
Vdc
— 2.5
— 0.45
1

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