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Número de pieza | 2N6976 | |
Descripción | 5A/ 400V and 500V N-Channel IGBTs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6976 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Semiconductor
2N6975, 2N6976,
2N6977, 2N6978
April 1995
5A, 400V and 500V N-Channel IGBTs
Features
Package
• 5A, 400V and 500V
• VCE(ON) 2V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
JEDEC TO-204AA
BOTTOM VIEW
EMITTER
COLLECTOR
(FLANGE)
GATE
• High Input Impedance
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protection Circuits
G
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
2N6975
TO-204AA
2N6976
TO-204AA
2N6977
TO-204AA
2N6978
TO-204AA
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified.
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage (RGE = 1MΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG
NOTE:
2N6975/2N6977
(Note 1)
400
400
5
±20
5
10
100
0.8
-55 to +150
1. JEDEC registered value.
2N6976/2N6978
(Note 1)
500
500
5
±20
5
10
100
0.8
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995
3-1
File Number 2297.2
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N6976.PDF ] |
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