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PDF 2N6849 Data sheet ( Hoja de datos )
| Número de pieza | 2N6849 | |
| Descripción | P.CHANNEL POWER MOSFETs | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N6849
P–CHANNEL
POWER MOSFETs
4 .1 9 (0 .1 6 5 )
4 .9 5 (0 .1 9 5 )
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
!
45°
2 .5 4
(0 .1 0 0 )
TO–39 METAL PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
VDSS
ID(cont)
RDS(on)
- 100V
- 6.5A
0.30W
FEATURES
• Single pulse avalanche energy rated
• SOA is power dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage*
±20V
VDS Drain – Source Voltage*
-100V
VDG
Drain – Gate Voltage (RGS = 20kW)*
-100V
ID Continuous Drain Current @ TC = 25°C*
–6.5A
@ TC = 100°C*
–4.1A
IDM Pulsed Drain Current2*
–25A
EAS Single Pulse Avalanche Current3
500mJ
PD
Power Dissipation
@ TC = 25°C*
25W
Linear Derating Factor*
0.2W/°C
TJ , TSTG
RqJC
RqJA
Operating and Storage Junction Temperature Range*
Thermal Resistance Junction to Case*
Thermal Resistance Junction to Ambient
–55 to +150°C
5°C/W
175°C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 9/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6849.PDF ] | |
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