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PDF 2N6800 Data sheet ( Hoja de datos )
| Número de pieza | 2N6800 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
2N6800
N–CHANNEL
POWER MOSFET
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
BVDSS
ID
RDS(on)
400V
3.0A
1.0W
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
!
2 .5 4
(0 .1 0 0 )
45°
TO39 – Package
Pin 1 – Source Pin 2 – Gate Pin 3 – Drain
Also available in a low profile version.
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 10V , Tcase = 25°C)
3A
ID Continuous Drain Current (VGS = 10V , Tcase = 100°C)
2A
IDM Pulsed Drain Current 1
12A
PD Power Dissipation @ Tcase = 25°C
25W
Linear Derating Factor
0.20W/°C
dv/dt
Peak Diode Recovery 3
4V/ns
TJ , Tstg
RqJC
RqJCA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C
5.0°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 50V , L ³ 0.100mH , RG = 25W , Peak IL = 1.5A , Starting TJ = 25°C
3) @ ISD £ 1.5A , di/dt £ 50A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 7.5W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
9/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6800.PDF ] | |
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