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PDF 2N6794 Data sheet ( Hoja de datos )

Número de pieza 2N6794
Descripción N-CHANNEL POWER MOSFET
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2N6794
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
N–CHANNEL ENHANCEMENT
MODE POWER MOSFET
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
BVDSS
ID(cont)
RDS(on)
500V
1.5
3.0
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2
13
2.54
(0.100)
45°
TO39 – Package (TO-205AF)
Underside View
Pin 1 Source Pin 2 Gate
Pin 3 Drain
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 10V , Tcase = 25°C)
1.5A
ID Continuous Drain Current (VGS = 10V , Tcase = 100°C)
IDM Pulsed Drain Current 1
1A
6.5A
PD Power Dissipation @ Tcase = 25°C
20W
Linear Derating Factor
0.16W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
0.11mJ
3.5V/ns
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C
6.25°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%
2) @ VDD = 50V , L 0.100mH , RG = 25, Peak IL = 1.5A , Starting TJ = 25°C
3) @ ISD 1.5A , di/dt 50A/µs , VDD BVDSS , TJ 150°C , SUGGESTED RG = 7.5
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 3094
Issue: 1

1 page





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