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PDF 2N6731 Data sheet ( Hoja de datos )
| Número de pieza | 2N6731 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt VCEO
* Gain of 100 at IC = 350 mA
* Ptot=1 Watt
2N6731
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
100
80
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100
V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=1mA, IC=0
Collector Cut-Off
Current
ICBO
0.1 µA VCB=80V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
10
0.35
µA
V
VEB=5V, IC=0
IC=350mA, IB=35mA*
Base-Emitter Turn-On VBE(on)
Voltage
1.0 V
IC=350mA, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition
Frequency
fT
100
100
50
IC=10mA, VCE=2V*
300 IC=350mA, VCE=2V*
500 MHz IC=200mA, VCE=5V
f=20MHz
Collector-Base
Capacitance
CCB
20 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-10
1 page | ||
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| PDF Descargar | [ Datasheet 2N6731.PDF ] | |
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