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Número de pieza | 2N6716 | |
Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
Fabricantes | Zetex Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6716 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
* Ptot=1 Watt
2N6716
2N6717
2N6718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL 2N6716
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
60
60
C
B
E
E-Line
TO92 Compatible
2N6717 2N6718
80 100
80 100
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL 2N6716 2N6717 2N6718 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
V(BR)CBO 60
80
100 V IC=0.1mA, IE=0
Breakdown Voltage
Collector-Emitter V(BR)CEO 60 80 100 V IC=1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO
5
5
5
V IE=1mA, IC=0
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
1 µA VCB=60V, IE=0
1 µA VCB=80V, IE=0
1 µA VCB=100V, IE=0
1 1 1 µA VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
VCE(sat)
VBE(on)
0.5 0.5 0.5 V IC=250mA, IB=10mA*
0.35 0.35 0.35 IC=250mA,IB=25mA*
1.2 1.2 1.2 V IC=250mA, VCE=1V*
Static Forward
Current Transfer
Ratio
Transition
Frequency
hFE
fT
80 80 80
50 250 50 250 50 250
20 20 20
IC=50mA, VCE=1V*
IC=250mA, VCE=1V*
IC=500mA, VCE=1V*
50 500 50 500 50 500 MHz IC=50mA, VCE=10V
Collector Base
Capacitance
CCB
30 30 30 pF VCE=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-6
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2N6716.PDF ] |
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