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PDF IRF1010NSPBF Data sheet ( Hoja de datos )

Número de pieza IRF1010NSPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF1010NSPBF Hoja de datos, Descripción, Manual

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
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The through-hole version (IRF1010NL) is available for low-
AprbofsileoalupptleicaMtioanxs.imum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ˆ
Continuous Drain Current, VGS @ 10V ˆ
Pulsed Drain Current ˆ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒˆ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
www.irf.com
PD - 95103
IRF1010NSPbF
IRF1010NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 11m
ID = 85A‡
S
D 2 Pak
TO-262
IRF1010NSPbF IRF1010NLPbF
Max.
85‡
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.85
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
03/11/04
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1 page




IRF1010NSPBF pdf
IRF1010NS/LPbF
100
LIMITED BY PACKAGE
80
60
40
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
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Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
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IRF1010NSPBF arduino
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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datasheet pdf - http://www.DataSheet4U.net/

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