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PDF 2N6661 Data sheet ( Hoja de datos )
| Número de pieza | 2N6661 | |
| Descripción | N-Channel Enhancement-Mode Vertical DMOS FETs | |
| Fabricantes | Supertex Inc | |
| Logotipo |  |
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Supertex inc.
2N6661
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►►Free from secondary breakdown
►►Low power drive requirement
►►Ease of paralleling
►►Low CISS and fast switching speeds
►►Excellent thermal stability
►►Integral source-drain diode
►►High input impedance and high gain
►►Hi-Rel processing available
General Description
The Supertex 2N6661 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Applications
►►Motor controls
►► Converters
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
►► Amplifiers
are desired.
►► Switches
►►Power supply circuits
►►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Part Number Package Option Packing
2N6661
TO-39
500/Bag
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Product Summary
BVDSX/BVDGS
RDS(ON)
(max)
90V 4.0Ω
Pin Configuration
ID(ON)
(min)
1.5A
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
SOURCE
GATE
DRAIN
TO-39
(Case : Drain)
Product Marking
2N6661
YYWW
YY = Year Sealed
WW = Week Sealed
Package may or may not include the following marks: Si or
TO-39
Doc.# DSFP-2N6661
D062813
Supertex inc.
www.supertex.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6661.PDF ] | |
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